1PS76SB62 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier diode

SMD Type
Schottky barrier Diodes
1PS76SB62
Diodes
Features
Ultra high swiching speed
Very low capacitance
High breakdown voltage
Guard ring protected
Two pin very small plastic SMD package.
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
PARAMATER
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
operating ambient temperature
SYMBOL
VR
IF
Tstg
Tj
Tamb
MIN
-65
-65
MAX
4
20
+150
125
+125
UNIT
V
mA
Electrical C haracteristics T a = 25
PARAMATER
SYMBOL
forward voltage
VF
reverse current
IR
diode capacitance
Cd
therm al resistance from junction to am bient
R thj-a
N o te :
1.Pulse test: pulse width = 300 s; ä = 0.02.
C O N D IT IO N S
IF = 2 m A;Note 1
VR = 40 V; note 1
VR = 0 V; f =1 MHz
MAX
800
1
0.6
450
U N IT
mV
A
pF
K /W
Marking
Marking
S6
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