1PS76SB21 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier diode

SMD Type
Schottky barrier Diodes
1PS76SB21
Diodes
Features
Ultra fast switching speed
Low forward volatge
Guard ring protected
Very small plastic SMD package.
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
PARAMATER
SYMBOL CONDITIONS MIN
continuous reverse voltage
VR
continuous forward current
VF
non-repetitive peak forward current
IFSM
tp < 10 ms
storage temperature
Tstg
-65
junction temperature
Tj
MAX
4
200
1
+150
125
UNIT
V
mA
A
Electrical Characteristics Ta = 25
PARAMATER
forward volatge
reverse current
diode capacitance
thermal resistance from junction to ambient
Note
SYMBOL
VF
IR
Cd
Rthj-a
CONDITIONS
IF = 10 mA
IF = 100 mA
IF = 200 mA
VR = 30 V;note 1
VR = 30 V;Tj = 100 ,note 1
f = 1 MHz; VR = 0 V;
MIN.
40
MAX.
300
420
550
15
3
50
450
UNIT
mV
mV
mV
A
mA
pF
K/W
Marking
Marking
S1
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