1PS76SB10 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier diode

SMD Type
Schottky barrier diode
1PS76SB10
Diodes
Features
Low forward volatge
Guard ring protected
Very small plastic SMD package.
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
PARAMATER
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-reetitiive peak forward current
storage temperature
junction temperature
operating ambient temperature
SYMBOL
CONDITIONS
MIN
MAX
UNIT
VR
30
V
VF
200
mA
TFRM
tp 1 s; ä 0.5
300
mA
TFSM
tp < 10 ms
600
mA
Tstg
-65
+150
Tj
125
Tamb
-65
+125
E le c tric a l C h a ra c te ris tic s T a = 2 5
PARAMATER
SYMBOL
fo rw a rd vo la tg e
VF
reverse current
d io d e c a p a c ita n c e
N ote
1 . P u ls e d te s t: tp = 3 0 0
IR
Cd
s; ä = 0.02.
C O N D IT IO N S
IF = 0.1 m A
IF = 1 m A
IF = 1 0 m A
IF = 3 0 m A
IF = 100 m A
V R = 25 V ; note 1;
f = 1 M Hz; VR = 1V;
Marking
Marking
S0
MAX
240
320
400
500
800
2
10
U N IT
mV
A
pF
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