1PS70SB40 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier double diodes

SMD Type
Schottky barrier (double) diodes
1PS70SB40;1PS70SB44
1PS70SB45;1PS70SB46
Diodes
Features
Low forward voltage
Guard ring protected
Very small plastic SMD package
Low diode capacitance
Absolute Maximum Ratings Ta = 25
Parameter
Continuous reverse voltage
Continuous forward current
Repetitive peak forward current
Non-repetitive peak forward current
Storage temperature
Junction temperature
Operating ambient temperature
Symbol
VR
IF
IFRM
IFSM
Tstg
Tj
Tamb
Conditions
tp 1s, ä 0.5
tp < 10 ms
Min
Max
Unit
40
V
120
mA
120
mA
200
mA
-65
+150
125
-65
+125
E lectrical C haracteristics T a = 25
Param eter
Sym bol
C ontinuous forward voltage
VF
C ontinuous reverse current
IR
C harge carrier life tim e
D iode capacitance
Cd
N o te
1. P ulse test: tp < 300 s; ä 0.02.
C onditions
IF = 1 m A
IF = 10 m A
IF = 40 m A
VR = 30 V, Note 1
VR = 40 V, Note 1
IF = 5 m A, Krakauer m ethod
VR = 0 V, f = 1 MHz
Max
380
500
1
1
10
100
5
U nit
mV
mV
V
A
ps
pF
Marking
Type
Marking
1PS70SB40 1PS70SB44 1PS70SB45 1PS70SB46
6*3
6*4
6*5
6*6
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