1PS70SB20 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier diode

SMD Type
Schottky barrier diode
1PS70SB20
Diodes
Features
Ultra high switching speed
Low forward voltage
Guard ring protected
Small SMD plastic package.
Absolute Maximum Ratings Ta = 25
Parameter
Continuous reverse voltage
Continuous forward current
Non-repetitive peak forward current
Storage temperature
Junction temperature
thermal resistance from junction to ambient
Symbol
Conditions
Min
VR
IF
IFSM t = 8.3 ms half sine wave;JEDEC method
Tstg
-65
Tj
Rth j-a
Max
Unit
40
V
500
mA
2
A
+150
125
500
K/W
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
Max
Unit
Forward voltage
VF
IF = 500 mA
550
mV
Reverse current
VR = 35 V
IR
VR = 35 V; Tj = 100 ;Note 1
100
A
10
mA
Diode capacitance
Cd
f = 1 MHz; VR = 0;
60
90
pF
Note
1. Pulse test: tp < 300 s; ä 0.02.
2.Refer to SOT323(SC-70) Standard mounting conditions.
Marking
Marking
72
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