1PS70SB10 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier double diodes

SMD Type
Schottky barrier (double) diodes
1PS70SB10; 1PS70SB14
1PS70SB15; 1PS70SB16
Diodes
Features
Low forward voltage
Guard ring protected
Very small plastic SMD package
Absolute Maximum Ratings Ta = 25
Parameter
Continuous reverse voltage
Continuous forward current
Repetitive peak forward current
Non-repetitive peak forward current
Total power dissipation (per package)
Storage temperature
Junction temperature
Operating ambient temperature
thermal resistance from junction to ambient
Symbol
VR
IF
IFRM
IFSM
Pt ot
Tstg
Tj
Ta mb
Rth j-a
Electrical Characteristics Ta = 25
Parameter
Symbol
Continuous forward voltage
VF
Reverse current
IR
Diode capacitance
Cd
Note
1. Pulse test: tp < 300 s; 0.02.
Conditions
tp 1s, ä 0.5
tp < 10 ms
Ta mb < 25
Min
Max
Unit
30
V
200
mA
300
mA
600
mA
200
mW
-65
+150
125
-65
+125
625
K/W
Conditions
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
IF = 30 mA
IF = 100 mA
VR = 25 V, Note 1
VR = 0 V; f = 1 MHz
Min
Max
Unit
240
mV
320
mV
400
mV
500
mV
800
mV
2
15
A
10
50
pF
Marking
Type
Marking
1PS70SB10 1PS70SB14 1PS70SB15 1PS70SB16
7*0
7*4
7*5
7*6
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