1PS59SB21 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier diode

SMD Type
Schottky barrier diode
1PS59SB21
Diodes
Features
Ultra fast switching speed
Low forward voltage
Guard ring protoected
Small SMD package.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Continuous reverse voltage
Continuous forward current
Non-repetitive peak forwrad current
Storage temperature
Junction temperature
Symbol
Min
Max
Unit
VR
40
V
IF
200
mA
IFSM
1
A
Tstg
-65
+150
Tj
125
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
IF = 10 mA
forward voltage
VF
IF = 100 mA
IF = 200 mA
reverse current
VR = 35 V
IR
VR = 35 V, Tj = 100 ,note 1
diode capacitance
Cd
f = 1 MHz; VR = 0 V
40
thermal resistance from junction to ambient Rth j-a
Note
1. Pulse test: tp = 300 s; ä = 0.02.
Max
Unit
300
420
mV
550
15
A
3
mA
50
pF
500
K/W
Marking
Marking
21
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