1N6263W Datasheet, PDF (1/1 Pages) Diodes Incorporated – SURFACE MOUNT SCHOTTKY BARRIER DIODE

SMD Type
SMALL SIGNAL DIODES
1N6263W
Diodes
Features
Low Forward Voltage Drop
Guard Ring Constuction for Transient Protection
Fast Switching Time
Low Reverse Capacitance
Surface Mount Package ldeally Suited for Automatic Insertion
SOD-123
2.7+0.1
-0.1
Unit: mm
1.1^+0.05
-0.05
3.7+0.1
-0.1
0.50
0.35
0.1max
Absolute Maximum Ratings Ta = 25
Paramater
Symbol
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
DC Blocking Volatge
VR
RMS Reverse Voltage
VR(RMS)
Forward Continuous Current
IF
Non-Repetitive Peak Forward Surge Current @ t 1.0s
IFSM
@ t = 10 ms
Power Dissipation (Note1)
Pd
Thermal Resistance, Junction to Ambient Air (Note 1)
IèJA
Operating Temperature Range
Tj
Storage Temperature Range
TSTG
Note:
1. Part mounted on FR-4 board with recommended pad layout.
Value
60
42
15
50
2.0
333
300
-55 to+125
-55 to+150
Unit
V
V
mA
mA
A
mW
/W
Electrical Characteristics Ta = 25
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Breakdown Voltage (Note 2) V(BR)R
IR = 10 A
60
V
Reverse Leakage Current (Note2)
IRM
VR = 50 V
200
nA
Forward Voltage Drop (Note2)
VFM
IF = 1.0 mA
IF = 15 mA
0.41
V
1.00
Total Capacitance
CT
VR = 0v, f = 1.0 MHz
2.0
pF
Reverse Recovery Time
IF =IR = 5.0 mA
trr
Irr = 0.1 x IR, RL = 100
1.0
ns
Note:
2. Short duration test pulse used to minimize self-heating effect.
Marking
Marking
SB
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