1N5817 Datasheet, PDF (1/3 Pages) Motorola, Inc – SCHOTTKY BARRIER RECTIFIERS 1 AMPERE 20, 30 and 40 VOLTS

SMD Type
Schottky Barrier Rectifier Diodes
1N5817-1N5819
Diodes
Features
For Surface Mounted Applications
Metal Silicon Junction, Majority Carrier Conduction
Low Power Loss, High Efficiency
High Forward Surge Current Capability
DO-214AC(SMA)
1.575
1.397
2
4.597
3.988
1
2.896 1.67
2.489 1.47
Unit: mm
3.93
3.73
5.283
4.775
2.438
1.981
2.38
2.18
5.49
5.29
Recommended
Land Pattern
1.524
0.762
0.203
0.051
0.305
0.152
Maximum Ratings and Electrical Characteristics @ Ta = 25
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Rating
Symbol
Unit
1N5817 1N5818 1N5819
VRRM
20
30
40
VRMS
14
21
28
V
VDC
20
30
40
I(AV)
1.0
A
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
IFSM
40
A
Maximum InstantaneousForward Voltage at 1.0A
Maximum DC Reverse Current TA=25
At Rated DC Blocking Voltage TA=100
Typical Junction Capacitance *1
Typical Thermal Resistance *2
Operating Runction Temperature Range
Storage Temperature Range
VF
0.45
0.55
0.55
V
0.5
IR
mA
6.0
CJ
110
pF
R JA
88.0
/W
TJ
-65 to +125
TSTG
-65 to +150
*1 Measured at 1Mz and applied reverse voltage of 4.0V D.C.
*2 P.C.B mounted with 0.2X0.2"(5.0x5.0mm)copper pad areas
Marking
Part NO.
Marking
1N5817
SS12
1N5818
SS13
1N5819
SS14
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