1N4150W Datasheet, PDF (1/1 Pages) Pan Jit International Inc. – SURFACE MOUNT SWITCHING DIODES

SMD Type
SMALL SIGNAL DIODES
1N4150W
Diodes
Features
Silicon Epitaxial Planar Diode
Fast general purpose and switching.
This diods is also available in other case styles including:
the DO-35 case with the type designation 1N4150 and
the Mini-MELF case with the type disignation LL4150.
SOD-123
2.7+0.1
-0.1
Unit: mm
1.1^+0.05
-0.05
3.7+0.1
-0.1
0.50
0.35
0.1max
Absolute Maximum Ratings Ta = 25
Paramater
Symbol
Value
Unit
Peak Reverse voktage
VRM
50
V
Maximum Average Rectified Current
Io
200
mA
Maximum Power Dissipation at Tamb = 25
Ptot
410⁽¹⁾
mW
Maximum Forward Voltage Drop at IF = 200mA
VF
1.0
V
Maximum Reverse Current at VR = 50 V
IR
100
nA
Maximum Reverse Recovery Time at IF = 10 to 200 mA, to 0.1 IF
Trr
4.0
ns
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Ts
-65 to+150
NOTES::
(1) Valid provided that electrodes are kept at ambient temperature
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