BCR3AS-12 Datasheet, PDF (9/13 Pages) Kersemi Electronic Co., Ltd. – Planar Passivation Type

Performance Curves
Maximum On-State Characteristics
10²
7
5
3
2
10¹
7
5
Tj = 150°C
3
2
10⁰
7
5
3
Tj = 25°C
2
10^–1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
On-State Voltage (V)
Gate Characteristics (I, II and III)
5
3
2
10¹
P_GM = 3W
7
5
IGM =
3
PG(AV) = 0.3W
0.5A
2
10⁰
I_{FGT I}, I_{RGT III}
7
5
I_{RGT I}
3
2
V_GD = 0.1V
10^–1
7
5
10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3 5 7 10³
Gate Current (mA)
Gate Trigger Voltage vs.
Junction Temperature
10³
7
Typical Example
5
4
3
2
10²
7
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140 160
Junction Temperature (°C)
Rated Surge On-State Current
40
35
30
25
20
15
10
5
0
10⁰ 2 3 4 5 7 10¹ 2 3 4 5 7 10²
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
10³
7
Typical Example
5
4
IRGT III
3
2
10²
7 ^{IFGT I, IRGT I}
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140 160
Junction Temperature (°C)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
Conduction Time (Cycles at 60Hz)
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