IRFR5410 Datasheet, PDF (5/10 Pages) Kersemi Electronic Co., Ltd. – HEXFET Power MOSFET

IRFR/U5410
15
12
9
6
3
0
25
50
75
100
125
150
T_C , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
V_DS
V_GS
R_G
R_D
D.U.T.
-10V
Pulse Width £ 1 µs
Duty Factor £ 0.1 %
-
+ V_DD
Fig 10a. Switching Time Test Circuit
V_GS
10%
t_d(on) t_r
t_d(off) t_f
90%
V_DS
Fig 10b. Switching Time Waveforms
1 ^{D = 0.50}
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t₂
Notes:
1. Duty factor D = t₁ / t ₂
2. Peak T_J = P _DM x Z _thJC + T_C
0.0001
0.001
0.01
0.1
1
t₁, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5 / 10
www.kersemi.com