IRFR3709ZPBF Datasheet, PDF (5/11 Pages) International Rectifier – HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 6.5mΩ , Qg = 17nC )

IRFR/U3709ZPbF
100
90
80
70
60
50
40
30
20
10
0
25
Limited By Package
50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
2.5
2.0
1.5
ID = 250µA
1.0
0.5
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
10
1 D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
τ_{J τJ}
τ_{1 τ1}
R_1R1
Ci= τi/Ri
Ci= τi/Ri
R_2R2
τ_{2 τ2}
R_{3R3 Ri (°C/W) τi (sec)}
τ_{Cτ 0.810 0.000260}
τ_{3 τ3}
0.640 0.001697
0.451 0.021259
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.kersemi.com
5