IRF9630 Datasheet, PDF (5/7 Pages) Intersil Corporation – 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs

Fig. 9 - Maximum Drain Current vs. Case Temperature
IRF9630, SiHF9630
V_DS
V_GS
R_G
R_D
D.U.T.
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+_{- VDD}
Fig. 10a - Switching Time Test Circuit
V_GS
10 %
t_d(on) t_r
t_d(off) t_f
90 %
V_DS
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
V_DS
Vary t_p to obtain
required I_AS
R_G
- 10 V
t_p
L
D.U.T
I_AS
0.01 Ω ^A
-
+
V
DD
Fig. 12a - Unclamped Inductive Test Circuit
I_AS
V_DS
V_DD
t_p
V_DS
Fig. 12b - Unclamped Inductive Waveforms
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