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| IRF9540PBF Datasheet, PDF (5/7 Pages) Kersemi Electronic Co., Ltd. – Power MOSFET | |||
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Fig. 9 - Maximum Drain Current vs. Case Temperature
IRF9540, SiHF9540
VDS
VGS
RG
RD
D.U.T.
- 10 V
Pulse width ⤠1 µs
Duty factor ⤠0.1 %
-
+VDD
Fig. 10a - Switching Time Test Circuit
VGS
10 %
td(on) tr
td(off) tf
90 %
VDS
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Vary tp to obtain
required IAS
RG
- 10 V
tp
L
D.U.T
IAS
0.01 Ω
-
+
V
DD
Fig. 12a - Unclamped Inductive Test Circuit
IAS
VDS
VDD
tp
VDS
Fig. 12b - Unclamped Inductive Waveforms
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