EC103D1 Datasheet, PDF (5/8 Pages) NXP Semiconductors – Thyristor, sensitive gate

EC103D1
8. Characteristics
Table 5: Characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Static characteristics
I_GT
gate trigger current
V_D = 12 V; I_T = 0.1 A; gate open
circuit
-
3
I_L
latching current
I_H
holding current
V_T
on-state voltage
V_GT
gate trigger voltage
I_D
off-state current
I_R
reverse current
Dynamic characteristics
V_D = 12 V; I_GT = 0.5 mA; R_GK = 1 kΩ
-
2
-
2
I_T = 1.0 A
I_T = 10 mA; gate open circuit
V_D = 12 V
V_D = V_{DRM (max)}; T_j = 125 °C
V_D = V_{DRM (max)}; V_R = V_{RRM (max)};
T_j = 125 °C; R_GK = 1 kΩ
-
1.2
-
0.5
0.2
0.3
-
50
-
50
dV_D/dt rate of rise of off-state
V_D = 0.67 V_DRM(max); T_case = 125 °C;
-
25
voltage
exponential waveform; R_GK = 1 kΩ
t_gt
gate controlled turn-on
I_TM = 2.0 A; V_D = V_DRM(max);
time
I_G = 10 mA; dI_G/dt = 0.1 A /µs
-
2
t_q
commutated turn-off time V_D = 0.67 V_DRM(max); T_j = 125 °C;
-
100
I_TM = 1.6 A; V_R = 35 V;
dI_TM/dt = 30 A /µs; dV_D/dt = 2 V/µs;
R_GK = 1 kΩ
Max
Unit
12
µA
6
mA
5
mA
1.35
V
0.8
V
-
V
100
µA
100
µA
-
V/µs
-
µs
-
µs
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