KSMB30N06L Datasheet, PDF (4/8 Pages) Kersemi Electronic Co., Ltd. – 60V LOGIC N-Channel MOSFET

KSMB30N06L / KSMI30N06L
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
※ Notes :
1. V_GS = 0 V
2. I_D =250 μ A
0.8
-100
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
is Limited by R _DS(on)
10²
100 µ s
1 ms
10 ms
DC
10¹
※ Notes :
1. T_C = 25 ^oC
2. T_J = 175 ^oC
3. Single Pulse
10⁰
10^-1
10⁰
10¹
10²
V , Drain-Source Voltage [V]
DS
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. V_GS = 10 V
2. I_D = 16 A
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 8. On-Resistance Variation
vs. Temperature
40
30
20
10
0
25
50
75
100
125
150
175
T , Case Temperature [℃]
C
Figure 10. Maximum Drain Current
vs Case Temperature
2014-8-1
1 0 ⁰ D =0 .5
1 0 ^-1
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
※ Notes :
1.
Z_θ
(t)
JC
=
1 .9 0
℃ /W
M ax.
2 . D u t y Fa c t o r , D = t /t
12
3. T
JM
-T
C
=
P
DM
*
Z_θ
(t)
JC
P_DM
t₁
t₂
1 0 ^-2
1 0 ^-5
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
t₁, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
4
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