KSM8N90C Datasheet, PDF (4/9 Pages) Kersemi Electronic Co., Ltd. – 900V N-Channel MOSFET

KSM8N90C/KSMF8N90C
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
※ Notes :
1.
2.
IV_DG=^{S =2500V}μ
A
0.8
-100
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. V_GS = 10 V
2. I = 3.15 A
D
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 8. On-Resistance Variation
vs Temperature
Operation in This Area
10²
is Limited by R _DS(on)
10¹
100 µs
1 ms
10 ms
10⁰
DC
10^-1
10^-2
10⁰
※ Notes :
1. T_C = 25 ^oC
2. T_J = 150 ^oC
3. Single Pulse
10¹
10²
10³
V_DS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP8N90C
Operation in This Area
10²
is Limited by R _DS(on)
10¹
10⁰
10^-1
10^-2
10⁰
100 µs
1 ms
10 ms
100 ms
DC
※ Notes :
1. T_C = 25 ^oC
2. T_J = 150 ^oC
3. Single Pulse
10¹
10²
10³
V_DS, Drain-Source Voltage [V]
Figure 9-2. Maximum Safe Operating Area
for FQPF8N90C
8
6
4
2
0
25
50
75
100
125
150
T , Case Temperature [℃]
C
Figure 10. Maximum Drain Current
vs Case Temperature
2014-6-18
4
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