IRFR9120NTRR Datasheet, PDF (4/10 Pages) Kersemi Electronic Co., Ltd. – HEXFET Power MOSFET

IRFR/U9120N
800
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
600
C_iss
400
C_oss
C_rss
200
0
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = -4.0 A
16
V_DS =-80V
V_DS =-50V
V_DS =-20V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
5
10
15
20
25
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
T_J = 150^° C
1
T_J = 25 ^° C
0.1
0.2
V_GS = 0 V
0.8
1.4
2.0
2.6
-V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10us
10
100us
1ms
1
10ms
T_C = 25 ° C
T_J = 150° C
Single Pulse
0.1
1
10
100
-V_DS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
4 / 10
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