IRFR430A Datasheet, PDF (4/7 Pages) International Rectifier – SMPS MOSFET

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
100
Coss
10
Crss
1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
100
10
T_J = 150 ^° C
1
T_J = 25 ^° C
V _GS= 0 V
0.1
0.2
0.5
0.8
1.1
1.4
V _SD,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
12
I^D = 5.0A
10
V_DS = 400V
V_DS = 250V
V_DS = 100V
7
5
2
0
0
4
8
12
16
20
Q_G , Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
100μsec
1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
10
100
10msec
1000
10000
VDS , Drain-toSource Voltage (V)
Fig. 8 - Maximum Safe Operating Area
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