IRFR18N15D Datasheet, PDF (4/10 Pages) International Rectifier – SMPS MOSFET

10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
100
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
IRFR18N15D/IRFU18N15D
20
ID = 11A
16
12
V_DS = 120V
V_DS = 75V
V_DS = 30V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
T_J = 175° C
1
T_J = 25 ° C
0.1
0.2
V_GS = 0 V
0.5
0.8
1.1
1.4
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
10us
100us
10
T_C = 25 °C
T_J = 175°C
Single Pulse
1
1
10
1ms
10ms
100
V_DS, Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
2014-8-19
4
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