IRFR13N15DPBF Datasheet, PDF (4/10 Pages) International Rectifier – HEXFET Power MOSFET

IRFR/U13N15DPbF
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
100
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ID = 8.3A}
16
V_DS = 120V
V_DS = 75V
V_DS = 30V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
5
10
15
20
25
30
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
T_J = 175 °C
10
T_J = 25 °C
1
0.1
0.2
V_GS = 0 V
0.4
0.6
0.8
1.0
1.2
1.4
V_SD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10us
10
100us
1ms
1
10ms
T_C = 25°C
T_J = 175°C
Single Pulse
0.1
1
10
100
V_DS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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