IRFIZ24N Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=14A)

IRFIZ24N
700
V _GS = 0V ,
f = 1MH z
C _{is s} = C_gs + C _{g d} , C_ds SH OR TED
600
C _rss = C_{g d}
C _oss = C_ds + C _gd
500
C iss
400
C _oss
300
200
C rss
100
0
A
1
10
100
V _{D S} , Drain-to-Source V oltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
I _D = 10A
16
V _DS = 44V
V _DS = 28V
12
8
4
FOR TES T CIRCUIT
SEE FIGURE 13
0
A
0
4
8
12
16
20
Q _G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
T_J = 175 °C
T_J = 25°C
10
1
VG S = 0V _A
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V _SD , Source-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
100
10µs
10
100µ s
T_C = 25°C
T_J = 175°C
S ing le Pulse
1
1
10
1m s
10m s
A
100
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area