IRF3808 Datasheet, PDF (4/9 Pages) International Rectifier – Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A⑥)

IRF3808
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
 12
ID = 82A
10
8
 ^{VDS = 60V}
V_DS = 37V
V_DS = 15V
6
4
2
0
0
40
80
120
160
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.00
100.00
TJ = 175°C
10000
1000
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
10.00
1.00
TJ = 25°C
0.10
0.0
VGS = 0V
0.5
1.0
1.5
2.0
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
100
100µsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
1msec
10msec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
2014-8-10
4
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