IRF1310NS Datasheet, PDF (4/10 Pages) International Rectifier – Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

IRF1310NS/L
3500
3000
2500
2000
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
1500
1000
500
C_oss
C_rss
0
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 22A
16
V_DS = 80V
V_DS = 50V
V_DS = 20V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
20
40
60
80
100 120
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
10
1
0.1
0.2
V _GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
10us
100us
10
1ms
T_C = 25 ^o C
T_J = 175 ^o C
Single Pulse
1
1
10
10ms
100
V_DS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
2014-8-30
4
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