AO3413 Datasheet, PDF (4/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
800
V_DS=-10V
4
I_D=-3A
600
3
400
2
1
200
0
0
0
2
4
6
8
0
-Q_g (nC)
Figure 7: Gate-Charge Characteristics
KSM3413
C_iss
C_rss
C_oss
5
10
15
20
-V_DS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
T_J(Max)=150°C
T_A=25°C
100µs
10µs
R_DS(ON)
limited
1.0
1s
1ms
0.1s _10ms
10s
DC
0.1
0.1
1
10
100
-V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
20
T_J(Max)=150°C
T_A=25°C
15
10
5
0
0.001 0.01 0.1
1
10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=T_on/(T_on+T_off)
T_J,PK=T_A+P_DM.Z_θJA.R_θJA
1 ^{RθJA=90°C/W}
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Single Pulse
P_D
T_on
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
1000
2014-5-29
4
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