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| KSMU5N50C Datasheet, PDF (3/8 Pages) Kersemi Electronic Co., Ltd. – 500V N-Channel MOSFET | |||
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KSMD5N50C / KSMU5N50C
Typical Characteristics
V
Top : 15.0GSV
10.0 V
101
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
100
10-1
10-1
â» Notes :
1. 250μ s Pulse Test
2. TC = 25â
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
101
150oC
25oC
100
-55oC
10-1
2
â» Notes :
1.
2.
V25DS0μ=s40PVulse
Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
4.5
4.0
3.5
V = 10V
GS
3.0
2.5
2.0
V = 20V
GS
1.5
1.0
â» Note : TJ = 25â
0.5
0
5
10
15
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1200
1000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
800
C
iss
Coss
600
400
C
rss
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
200
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
100
10-1
0.2
150â
25â
â» Notes :
1.
2.
V25G0S μ=
0V
s Pulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V = 100V
DS
V = 250V
8
DS
V = 400V
DS
6
4
2
â» Note : ID = 5A
0
0
5
10
15
20
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
2014-7-11
3
www.kersemi.com
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