KSMP6375 Datasheet, PDF (3/4 Pages) Kersemi Electronic Co., Ltd. – Green device available.

KSMP6375
KERSMI ELECTRONIC CO.,LTD.
-20V P-channel MOSFET
Notes:
1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper.
2. The data tested by pulse width≤300us,duty cycle≤2%
3. The EAS data shows Max.rating.The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A
4. The power dissipation is limited by 150℃ junction temperature.
Typical Characteristics TJ=25℃ unless otherwise noted
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Dain Current and Gate Voltage.
Figure 3. On-Resistance Variation with
with Temperature .
Figure 4. On-Resistance Variation
Gate-to-Source Voltage
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