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| KSMD12N20LTM_F085 Datasheet, PDF (3/8 Pages) Kersemi Electronic Co., Ltd. – 200V Logic Level N-Channel MOSFET | |||
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KSMD12N20LTM_F085
Typical Characteristics
VGS
Top : 10 V
8.0 V
101
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
100
10-1
10-1
â» Notes :
1. 250μs Pulse Test
2. TC = 25â
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
1.5
1.2
VGS = 5 V
0.9
VGS = 10V
0.6
0.3
0.0
0
6
12
18
24
30
36
ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1800
1500
1200
900
600
300
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
Coss
Crss
â» Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150â
100
25â
10-1
0
-55â
â» Notes :
1. VDS = 30V
2. 250μs Pulse Test
2
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150â 25â
â» Notes :
1.
2.
2V5G0Sμ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
VDS = 40V
VDS = 100V
8
VDS = 160V
6
4
2
â» Note : ID = 11.6 A
0
0
5
10
15
20
25
30
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
2014-7-15
3
www.kersemi.com
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