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KSMB630 Datasheet, PDF (3/4 Pages) Kersemi Electronic Co., Ltd. – Excellent package for good heat dissipation.
KSMB630
KERSMI ELECTRONIC CO.,LTD.
200V N-channel MOSFET
3. The EAS data shows Max.rating.The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A
4. The power dissipation is limited by 150℃ junction temperature.
Typical Characteristics TJ=25℃ unless otherwise noted
Fig. 1 Typical Output Characteristics,
TC = 25 °
Fig. 2 Typical Transfer Characteristics
Fig. 3 Typical Output Characteristics,
TC = 150 °C
Fig. 4 - Normalized On-Resistance vs.
Temperature
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