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| KSM9N25C Datasheet, PDF (3/7 Pages) Kersemi Electronic Co., Ltd. – 250V N-Channel MOSFET | |||
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KSM9N25C/KSMF9N25C
Typical Characteristics
Top :
V
GS
15.0 V
10.0 V
8.0 V
101
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
10-1
â» Notes :
1. 250µ s Pulse Test
2. TC = 25â
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.25
1.00
0.75
0.50
0.25
0.00
0
VGS = 10V
VGS = 20V
â» Note : TJ = 25â
10
20
30
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
2000
1500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1000
500
â» Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1
Ciss
C
oss
Crss
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150oC
25oC
100
-55oC
10-1
2
â» Notes :
1. VDS = 40V
2. 250µ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150â
25â
â» Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 50V
10
VDS = 125V
8
VDS = 200V
6
4
2
â» Note : ID = 8.8A
0
0
5
10
15
20
25
30
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
2014-6-21
3
www.kersemi.com
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