KSM6N60C Datasheet, PDF (3/7 Pages) Kersemi Electronic Co., Ltd. – 600V N-Channel MOSFET

KSM6N60C/KSMF6N60C
Typical CharacteristicsTypical Characteristics (Continued)
10^{1 Top :}
15V.0^GSV
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
10⁰ Bottom: 4.5 V
10^-1
10^-2
10^-1
※ Notes :
1. 250µ s Pulse Test
2. T_C = 25℃
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
10¹
150^oC
10⁰
25^oC
-55^oC
10^-1
2
※ Notes :
1.
2.
V25_{DS0µ=s40PVulse}
Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
6
5
V_GS = 10V
4
3
2
V_GS = 20V
1
※ Note : T_J = 25℃
0
0
2
4
6
8
10
12
14
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1000
800
600
400
200
0
10^-1
CCC_iorssssss===CCC_ggdsds++CC_ggdd(C_ds = shorted)
C_iss
C_oss
C_rss
※ Note ;
1.
2.
Vf _=GS1=M0HVz
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10¹
10⁰
10^-1
0.2
150℃
25℃
※ Notes :
1.
2.
2V5^G0^S µ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V_DS = 120V
V_DS = 300V
8
V_DS = 480V
6
4
2
※ Note : I_D = 5.5A
0
0
4
8
12
16
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
2014-6-7
3
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