KSM3N60C Datasheet, PDF (3/6 Pages) Kersemi Electronic Co., Ltd. – 600V N-Channel MOSFET

KSM3N60C
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10¹
Top :
V_GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
10⁰
10^-1
10⁰
œ Notes :
1. 250µ s Pulse Test
2. T_C = 25
10¹
V_DS, Drain-Source Voltage [V]
10¹
10⁰
2
150^oC
25^oC
-55^oC
œ Notes :
1. V_DS = 40V
2. 250µ s Pulse Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
8
6
V_GS = 10V
4
V_GS = 20V
2
œ Note : T_J = 25
0
0
1
2
3
4
5
6
7
I_D, Drain Current [A]
10¹
10⁰
10^-1
0.2
150
25
œ Notes :
1. V_GS = 0V
2. 250µ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V_SD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
800
700
600
500
400
300
200
100
0
10^-1
C_oss
C_iss
C = C + C (C = shorted)
iss
gs
gd ds
C_oss = C_ds + C_gd
C_rss = C_gd
C_rss
œ Note ;
1. V_GS = 0 V
2. f = 1 MHz
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 6. Gate Charge Characteristics
12
10
V_DS = 120V
8
V_DS = 300V
V_DS = 480V
6
4
2
œ Note : I_D = 10A
0
0
2
4
6
8
10
12
Q_G, Total Gate Charge [nC]
2014-5-30
3
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