IRFR310B Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – 400V N-Channel MOSFET

Typical Characteristics
V_GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
10⁰
6.0 V
5.5 V
Bottom : 5.0 V
10^-1
10^-2
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
12
10
V = 10V
GS
8
V_GS = 20V
6
4
2
※ Note : T_J = 25℃
0
0
1
2
3
4
5
6
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
500
C_iss = C_gs + C_gd (C_ds = shorted)
C =C +C
oss ds gd
C_rss = C_gd
400
C
300
iss
200
100
0
10^-1
C_oss
C_rss
※ Notes :
1. V_GS = 0 V
2. f = 1 MHz
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
10⁰
150^oC
10^-1
2
25^oC
-55^oC
※ Notes :
1.
2.
2V5^DS0μ^=s40PVulse
Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10⁰
10^-1
0.2
150℃
25℃
※ Notes :
1.
2.
V25_G0Sμ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
6
4
2
0
0.0
V = 80V
DS
V = 200V
DS
V = 320V
DS
※ Note : I = 2.0 A
D
1.5
3.0
4.5
6.0
7.5
9.0
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
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