IRFR024R Datasheet, PDF (3/7 Pages) Kersemi Electronic Co., Ltd. – Power MOSFET

IRFR024, IRFU024, SiHFR024, SiHFU024
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I_S
MOSFET symbol
showing the
Pulsed Diode Forward Current^a
integral reverse
I_SM
p - n junction diode
D
G
S
-
-
14
A
-
-
56
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
V_SD
T_J = 25 °C, I_S = 14 A, V_GS = 0 V^b
-
-
1.5
V
t_rr
Q_rr
-
88
180
ns
T_J = 25 °C, I_F = 17 A, dI/dt = 100 A/µs^b
-
0.29 0.64 µC
t_on
Intrinsic turn-on time is negligible (turn-on is dominated by L_S and L_D)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, T_C = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, T_C = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
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