IRF1010E Datasheet, PDF (3/8 Pages) International Rectifier – Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A⑦

IRF1010E
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
20µs PULSE WIDTH
TJ = 25 ^°C
1
0.1
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
10
0.1
20µs PULSE WIDTH
TJ = 175 ^°C
1
10
100
V_DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
T_J = 25^° C
T_J = 175 ° C
V _DS= 25V
20µs PULSE WIDTH
10
4
5
6
7
8
9
10 11
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
2014-8-12
3
3.0 _{ID = 84A}
2.5
2.0
1.5
1.0
0.5
V_GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T_J, Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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