FQP10N60C Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

V_GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
10¹
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10⁰
10^-1
10⁰
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
2.0
1.5
V_GS = 10V
1.0
0.5
V_GS = 20V
0.0
0
※ Note : T_J = 25℃
5
10
15
20
25
30
35
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
3000
2500
2000
1500
1000
500
0
10^-1
C_iss
C
oss
C_rss
C_iss = C_gs + C_gd (C_ds = shorted)
C =C +C
oss
ds
gd
C =C
rss gd
※ Notes ;
1. V_GS = 0 V
2. f = 1 MHz
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10¹
150^oC
25^oC
10⁰
-55^oC
10^-1
2
※ Notes :
1.
2.
V25_DS0μ=s40PVulse
Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150℃
25℃
※ Notes :
1. V = 0V
2. 25^GS0μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V_DS = 120V
10
V = 300V
DS
V = 480V
8
DS
6
4
2
※ Note : I_D = 9.5A
0
0
10
20
30
40
50
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics