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| MUR8100E Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – 8A, 1000V Ultrafast Diodes | |||
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MUR8100E, MUR880E
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
MUR880E
MUR8100E
Symbol
VRRM
VRWM
VR
Value
800
1000
Unit
V
Average Rectified Forward Current
(Rated VR, TC = 150°C) Total Device
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 150°C)
NonâRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IF(AV)
8.0
A
IFM
16
A
IFSM
100
A
Operating Junction and Storage Temperature Range
TJ, Tstg
â65 to +175
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance, JunctionâtoâCase
Symbol
RqJC
Value
2.0
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 8.0 A, TC = 150°C)
(iF = 8.0 A, TC = 25°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, TC = 100°C)
(Rated DC Voltage, TC = 25°C)
Maximum Reverse Recovery Time
(IF = 1.0 A, di/dt = 50 A/ms)
(IF = 0.5 A, iR = 1.0 A, IREC = 0.25 A)
Controlled Avalanche Energy
(See Test Circuit in Figure 6)
Symbol
vF
iR
trr
WAVAL
Value
1.5
1.8
500
25
100
75
20
Unit
V
mA
ns
mJ
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