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| MUR1660CT Datasheet, PDF (2/7 Pages) Sirectifier Semiconductors – Ultra Fast Recovery Diodes | |||
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MUR1610CT, MUR1615CT, MUR1620CT, MUR1640CT, MUR1660CT
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Total Device, (Rated VR), TC = 150°C
Per Leg
Total Device
Peak Rectified Forward Current
Per Diode Leg
(Rated VR, Square Wave, 20 kHz), TC = 150°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single
phase, 60 Hz)
Operating Junction Temperature and Storage Temperature
THERMAL CHARACTERISTICS (Per Diode Leg)
Maximum Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 1.)
(iF = 8.0 Amps, TC = 150°C)
(iF = 8.0 Amps, TC = 25°C)
Maximum Instantaneous Reverse Current (Note 1.)
(Rated dc Voltage, TC = 150°C)
(Rated dc Voltage, TC = 25°C)
Maximum Reverse Recovery Time
(IF = 1.0 Amp, di/dt = 50 Amps/µs)
(IF = 0.5 Amp, IR = 1.0 Amp, IREC = 0.25 Amp)
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle ⤠2.0%
Symbol
VRRM
VRWM
VR
IF(AV)
IFM
10CT
100
15CT
150
MUR16
20CT
200
40CT
400
8.0
16
16
60CT
600
Unit
Volts
Amps
Amps
IFSM
100
Amps
TJ, Tstg
RθJC
vF
iR
trr
*65 to +175
°C
3.0
2.0
°C/W
0.895
0.975
250
5.0
35
25
1.00 1.20
1.30 1.50
500
10
60
50
Volts
µA
ns
http://kersemi.com
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