MCR72-3 Datasheet, PDF (2/4 Pages) ON Semiconductor – SENSITIVE GATE SILICON CONTROLLED RECTIFIERS

MCR72–3, MCR72–6, MCR72–8
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Case
R_θJC
2.2
Thermal Resistance, Junction to Ambient
R_θJA
60
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
TL
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current(1)
IDRM, IRRM
(VAK = Rated VDRM or VRRM; RGK = 1 kΩ)
TJ = 25°C
—
TJ = 110°C
—
ON CHARACTERISTICS
—
10
µA
—
500
µA
p p Peak Forward On-State Voltage
(ITM = 16 A Peak, Pulse Width 1 ms, Duty Cycle 2%)
Gate Trigger Current (Continuous dc)(2)
(VD = 12 V, RL = 100 Ω)
Gate Trigger Voltage (Continuous dc)(2)
(VD = 12 V, RL = 100 Ω)
VTM
IGT
VGT
—
1.7
2.0
Volts
—
30
200
µA
—
0.5
1.5
Volts
Gate Non–Trigger Voltage
(VD = 12 Vdc, RL = 100 Ω, TJ = 110°C)
Holding Current
(VD = 12 V, Initiating Current = 200 mA, Gate Open)
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 16 A, IG = 2 mA)
DYNAMIC CHARACTERISTICS
VGD
IH
tgt
0.1
—
—
Volts
—
—
6.0
mA
—
1.0
—
µs
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, RGK = 1 kΩ, TJ = 110°C, Exponential Waveform)
dv/dt
—
10
—
V/µs
(1) Ratings apply for negative gate voltage or RGK = 1 kΩ. Devices shall not have a positive gate voltage concurrently with a negative
voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such
that the voltage applied exceeds the rated blocking voltage.
(2) RGK current not included in measurement.
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