KSMU50N06 Datasheet, PDF (2/4 Pages) Kersemi Electronic Co., Ltd. – Green device available.

KSMU50N06
KERSMI ELECTRONIC CO.,LTD.
60V
Symbol
Parameter
RƟJC
Thermal Resistance ,Junction to Case1
RƟJA
Thermal Resistance, Junction to Ambient1
N-channel MOSFET
Ratings Units
3.28
℃/W
110
Package Marking and Ordering Information
Part NO.
KSMU50N06
Marking
KSMU50N06
Package
TO-251
Electrical Characteristics TC=25℃ unless otherwise noted
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
Parameter
Conditions
Off Characteristics
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
Gate-Source Leakage Current
VDS=±20V, VDS=0A
On Characteristics
GATE-Source Threshold Voltage
VDS=VDS, ID=250μA
Drain-Source On Resistance²
VDS=10V,ID=6A
Min Typ
60 —
——
——
2.0 —
— 0.050
GFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
VDS=2.5V,ID=5A
—
Forward Transconductance
VDS=5V,ID=12A
—
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
—
—
f=1MHz
—
Switching Characteristics
Turn-On Delay Time
VDS=20V,
—
Rise Time
—
Turn-Off Delay Time
VGS=10V,RGEN=3.3Ω
—
Fall Time
—
Total Gate Charge
—
Gate-SourceCharge
VGS=4.5V, VDS=20V,
—
Gate-Drain “Miller” Charge
ID=6A
—
Drain-Source Diode Characteristics
Source-Drain Diode ForwardVoltage²
VGS=0V,IS =1A
—
Reverse Recovery Time
Reverse Recovery Charge
—
IF=7A,di/dt=100A/μS
—
—
10
450
170
25
5
45
20
25
11.5
3
4.5
—
43
50
Max
—
1
±100
4.0
0.02
—
—
590
220
35
20
100
50
60
15
—
—
1.5
—
—
Units
v
μA
nA
V
Ω
---
S
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
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