KSMT315P Datasheet, PDF (2/5 Pages) Kersemi Electronic Co., Ltd. – Green device available.

KSMT315P/BSP315P
KERSMI ELECTRONIC CO.,LTD.
-60V P-channel MOSFET
Symbol
RƟJC
RƟJA
Parameter
Thermal Resistance, Junction to Case1
Thermal Resistance ,Junction to Ambient1
Ratings
—
—
Units
℃/W
Package Marking and Ordering Information
Part NO.
KSMT315P
Marking
KSMT315P
Package
SOT-223
Electrical Characteristics TC=25℃ unless otherwise noted
Symbol
Parameter
Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
-60 —
—
v
IDSS
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
— -0.1 -1 μA
IGSS
Gate-Source Leakage Current
VDS=±20V, VDS=0A
— — ±100 nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VDS=VDS, ID=250μA
——
—
V
RDS(ON)
Drain-Source On Resistance²
VDS=10V,ID=6A
VDS=2.5V,ID=5A
— 0.8 1.4
Ω
— 0.5 0.8
GFS
Forward Transconductance
VDS=5V,ID=12A
—— —
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
— 130 160
— 40 50 pF
— 17 21
Switching Characteristics
td(on)
Turn-On Delay Time
VDS=20V,
— 24 36 ns
tr
td(off)
Rise Time
Turn-Off Delay Time
— 9 14 ns
VGS=10V,RGEN=3.3Ω
— 32
48
ns
tf
Fall Time
— 19 28 ns
Qg
Total Gate Charge
— 0.7 1.1 nC
Qgs
Gate-Source Charge
VGS=4.5V, VDS=20V,
— 1.8 2.6
nC
Qgd
Gate-Drain “Miller” Charge
ID=6A
— 5.2 7.8 nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode ForwardVoltage²
VGS=0V,IS =1A
—— —
V
trr
Reverse Recovery Time
— 30. 46
ns
IF=7A,di/dt=100A/μS
5
Qrr
Reverse Recovery Charge
— 36 54
nC
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