KSMF840 Datasheet, PDF (2/4 Pages) Kersemi Electronic Co., Ltd. – Green device available.

KSMF840
KERSMI ELECTRONIC CO.,LTD.
Symbol
Parameter
RƟJC
Thermal Resistance ,Junction to Case1
RƟJA
Thermal Resistance, Junction to Ambient1
Ratings
65
3.1
Units
℃/W
Package Marking and Ordering Information
Part NO.
KSMF840
Marking
KSMF840
Package
TO-220F
Electrical Characteristics TC=25℃ unless otherwise noted
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
Parameter
Conditions
Off Characteristics
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
Gate-Source Leakage Current
VDS=±20V, VDS=0A
On Characteristics
GATE-Source Threshold Voltage
VDS=VDS, ID=250μA
Drain-Source On Resistance²
VDS=10V,ID=6A
Min Typ Max Units
500 —
——
——
—v
25 μA
± _nA
2.0 — 4.0 V
— — 0.9 _Ω
VDS=2.5V,ID=5A
— — — ---
GFS
Forward Transconductance
VDS=5V,ID=12A
3.7 — — S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
— 1300 —
— 200 — pF
— 39 —
Switching Characteristics
td(on)
Turn-On Delay Time
VDS=20V,
— 14 — ns
tr
Rise Time
— 22 — ns
td(off)
Turn-Off Delay Time
VGS=10V,RGEN=3.3Ω
— 55
—
ns
tf
Fall Time
— 21 — ns
Qg
Total Gate Charge
— — 67 nC
Qgs
Gate-SourceCharge
VGS=4.5V, VDS=20V,
——
10 nC
Qgd
Gate-Drain “Miller” Charge
ID=6A
— — 34 nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode ForwardVoltage²
VGS=0V,IS =1A
— — 2.0 V
trr
Reverse Recovery Time
— 340 680 ns
IF=7A,di/dt=100A/μS
Qrr
Reverse Recovery Charge
— 1.8 2.6 nC
www.kersemi.com
2