KSMD4N60 Datasheet, PDF (2/4 Pages) Kersemi Electronic Co., Ltd. – Excellent package for good heat dissipation.

KSMD4N60
KERSMI ELECTRONIC CO.,LTD.
Symbol
Parameter
RƟJC
Thermal Resistance, Junction to Case1
RƟJA
Thermal Resistance ,Junction to Ambient1
Ratings
2.56
110
Units
℃/W
Package Marking and Ordering Information
Part NO.
KSMD4N60
Marking
KSMD4N60
Package
TO-252
Electrical Characteristics TC=25℃ unless otherwise noted
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
GFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
Parameter
Conditions
Min Typ
Off Characteristics
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
600 —
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
——
Gate-Source Leakage Current
VDS=±20V, VDS=0A
——
On Characteristics
GATE-Source Threshold Voltage
VDS=VDS, ID=250μA
2.0 —
Drain-Source On Resistance²
VDS=10V,ID=6A
VDS=2.5V,ID=5A
— 2.0
——
Forward Transconductance
VDS=5V,ID=12A
— 4.7
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
— 515
— 55
— 6.2
Switching Characteristics
Turn-On Delay Time
VDS=20V,
— 10
Rise Time
— 42
Turn-Off Delay Time
VGS=10V,RGEN=3.3Ω
— 38
Fall Time
— 46
Total Gate Charge
— 15
Gate-Source Charge
VGS=4.5V, VDS=20V,
— 2.5
Gate-Drain “Miller” Charge
ID=6A
— 6.6
Drain-Source Diode Characteristics
Source-Drain Diode ForwardVoltage²
VGS=0V,IS =1A
——
Reverse Recovery Time
Reverse Recovery Charge
IF=7A,di/dt=100A/μS
— 300
— 2.2
Max
—
1
±100
4.0
2.4
—
—
670
72
8.5
30
90
85
100
19
—
—
1.4
—
—
Units
v
μA
nA
V
Ω
S
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
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