KSMB2N60 Datasheet, PDF (2/4 Pages) Kersemi Electronic Co., Ltd. – Green device available.

KERSMI ELECTRONIC CO.,LTD.
KSMB2N60
Package Marking and Ordering Information
Part NO.
KSMB2N60
Marking
KSMB2N60
Package
TO-263
Electrical Characteristics TC=25℃ unless otherwise noted
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
Parameter
Conditions
Off Characteristics
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
Gate-Source Leakage Current
VDS=±20V, VDS=0A
On Characteristics
GATE-Source Threshold Voltage
VDS=VDS, ID=250μA
Drain-Source On Resistance²
VDS=10V,ID=6A
Min Typ
600 —
——
——
3.0 —
— 3.7
GFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
VDS=2.5V,ID=5A
——
Forward Transconductance
VDS=5V,ID=12A
— 2.45
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
— 270
— 40
—5
Switching Characteristics
Turn-On Delay Time
VDS=20V,
— 10
Rise Time
— 25
Turn-Off Delay Time
VGS=10V,RGEN=3.3Ω
— 20
Fall Time
— 25
Total Gate Charge
— 9.0
Gate-Source Charge
VGS=4.5V, VDS=20V,
— 1.6
Gate-Drain “Miller” Charge
ID=6A
— 4.3
Drain-Source Diode Characteristics
Source-Drain Diode ForwardVoltage²
VGS=0V,IS =1A
——
Reverse Recovery Time
Reverse Recovery Charge
IF=7A,di/dt=100A/μS
— 180
— 0.72
Max Units
—v
10 μA
±100 _nA
5.0 V
4.2 _Ω
— ---
—S
350
50 pF
7
30 ns
60 ns
50 ns
60 ns
11 nC
— nC
— nC
1.4 V
— ns
— nC
Notes:
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