KSMB11P06 Datasheet, PDF (2/4 Pages) Kersemi Electronic Co., Ltd. – Green device available.

KSMB11P06
KERSMI ELECTRONIC CO.,LTD.
-60V P-channel MOSFET
Package Marking and Ordering Information
Part NO.
KSMB11P06
Marking
KSMB11P06
Package
TO-263
Electrical Characteristics TC=25℃ unless otherwise noted
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
Parameter
Conditions
Off Characteristics
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
Gate-Source Leakage Current
VDS=±20V, VDS=0A
On Characteristics
GATE-Source Threshold Voltage
VDS=VDS, ID=250μA
Drain-Source On Resistance²
VDS=10V,ID=6A
Min Typ
-60 —
——
——
-3.0 —
— 0.14
Max Units
—
v
-1 μA
±100 _nA
-5.0 V
0.175 _Ω
VDS=2.5V,ID=5A
——
— ---
GFS
Forward Transconductance
VDS=5V,ID=12A
— 5.1 —
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=15V,VGS=0V,
— 420 550
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
f=1MHz
— 195 250 pF
— 45 60
Switching Characteristics
td(on)
Turn-On Delay Time
VDS=20V,
— 6.5 25 ns
tr
Rise Time
— 40 90 ns
td(off)
Turn-Off Delay Time
VGS=10V,RGEN=3.3Ω
—
15
40
ns
tf
Fall Time
— 45 100 ns
Qg
Total Gate Charge
— 13 17 nC
Qgs
Gate-SourceCharge
VGS=4.5V, VDS=20V,
—
2.0
—
nC
Qgd
Gate-Drain “Miller” Charge
ID=6A
— 6.3 — nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode ForwardVoltage²
VGS=0V,IS =1A
— — -4.0 V
trr
Reverse Recovery Time
— 83
—
ns
IF=7A,di/dt=100A/μS
Qrr
Reverse Recovery Charge
— 0.26 — nC
Notes:
1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper.
www.kersemi.com
2