KSMB10N60 Datasheet, PDF (2/4 Pages) Kersemi Electronic Co., Ltd. – Green device available.

KSMB10N60
KERSMI ELECTRONIC CO.,LTD.
Symbol
Parameter
RƟJC
Thermal Resistance ,Junction to Case1
RƟJA
Thermal Resistance, Junction to Ambient1
Ratings
0.8
62.5
Units
℃/W
Package Marking and Ordering Information
Part NO.
KSMB10N60
Marking
KSMB10N60
Package
TO-263
Electrical Characteristics TC=25℃ unless otherwise noted
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
Parameter
Conditions
Off Characteristics
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
Gate-Source Leakage Current
VDS=±20V, VDS=0A
On Characteristics
GATE-Source Threshold Voltage
VDS=VDS, ID=250μA
Drain-Source On Resistance²
VDS=10V,ID=6A
Min Typ Max Units
600 — — v
— — 1 μA
— — ±100 nA
2.0 — 4.0 V
— 0.6
1.0
Ω
GFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
VDS=2.5V,ID=5A
— — — ---
Forward Transconductance
VDS=5V,ID=12A
— 8.0 — S
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
— 1570 2040
— 166 215 pF
— 18 24
Switching Characteristics
Turn-On Delay Time
VDS=20V,
— 23 55 ns
Rise Time
Turn-Off Delay Time
VGS=10V,RGEN=3.3Ω
— 69 150 ns
— 144 300 ns
Fall Time
— 77 165 ns
Total Gate Charge
— 44 57 nC
Gate-SourceCharge
Gate-Drain “Miller” Charge
VGS=4.5V, VDS=20V,
ID=6A
— 6.7 — nC
— 18.5 — nC
Drain-Source Diode Characteristics
Source-Drain Diode ForwardVoltage²
VGS=0V,IS =1A
— — 1.4 V
Reverse Recovery Time
Reverse Recovery Charge
— 420 — ns
IF=7A,di/dt=100A/μS
— 4.2 — nC
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