KSM9Z24N Datasheet, PDF (2/4 Pages) Kersemi Electronic Co., Ltd. – Advanced high cell denity trench technology for ultra RDS

KSM9Z24N
KERSMI ELECTRONIC CO.,LTD.
-55V P-channel MOSFET
Symbol
Parameter
Ratings Units
RƟJC
Thermal Resistance ,Junction to Case1
3.3
℃/W
RƟJA
Thermal Resistance, Junction to Ambient1
62
Package Marking and Ordering Information
Part NO.
KSM9Z24
Marking
KSM9Z24
Package
TO-220
Electrical Characteristics TC=25℃ unless otherwise noted
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
GFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
Parameter
Conditions
Min Typ
Off Characteristics
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
-55 —
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
——
Gate-Source Leakage Current
VDS=±20V, VDS=0A
——
On Characteristics
GATE-Source Threshold Voltage
VDS=VDS, ID=250μA -2.0 —
Drain-Source On Resistance²
VDS=10V,ID=6A
VDS=2.5V,ID=5A
——
——
Forward Transconductance
VDS=5V,ID=12A
2.5 —
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
— 350
— 170
— 92
Switching Characteristics
Turn-On Delay Time
VDS=20V,
— 13
Rise Time
— 55
Turn-Off Delay Time
VGS=10V,RGEN=3.3Ω
— 23
Fall Time
— 37
Total Gate Charge
——
Gate-SourceCharge
VGS=4.5V, VDS=20V,
——
Gate-Drain “Miller” Charge
ID=6A
——
Drain-Source Diode Characteristics
Source-Drain Diode ForwardVoltage²
VGS=0V,IS =1A
— -1.6
Reverse Recovery Time
Reverse Recovery Charge
IF=7A,di/dt=100A/μS
— 47
— 84
Max
—
-25
±100
-4.0
0.175
—
—
—
—
—
—
—
—
—
19
5.1
10
—
71
130
Units
v
μA
nA
V
Ω
S
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
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