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KSM9530 Datasheet, PDF (2/4 Pages) Kersemi Electronic Co., Ltd. – Green device available. | |||
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KSM9530
KERSMI ELECTRONIC CO.,LTD.
-100V P-channel MOSFETS
Symbol
Parameter
Ratings Units
RÆJC
Thermal Resistance ,Junction to Case1
62
â/W
RÆJA
Thermal Resistance, Junction to Ambient1
1.7
Package Marking and Ordering Information
Part NO.
KSM9530
Marking
KSM9530
Package
TO-220
Electrical Characteristics TC=25â unless otherwise noted
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
Parameter
Conditions
Off Characteristics
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
Gate-Source Leakage Current
VDS=±20V, VDS=0A
On Characteristics
GATE-Source Threshold Voltage
VDS=VDS, ID=250μA
Drain-Source On Resistance²
VDS=10V,ID=6A
Min
-100
â
â
-2.0
â
GFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
VDS=2.5V,ID=5A
â
Forward Transconductance
VDS=5V,ID=12A
3.7
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
â
â
f=1MHz
â
Switching Characteristics
Turn-On Delay Time
VDS=20V,
â
Rise Time
â
Turn-Off Delay Time
VGS=10V,RGEN=3.3Ω
â
Fall Time
â
Total Gate Charge
â
Gate-SourceCharge
VGS=4.5V, VDS=20V,
â
Gate-Drain âMillerâ Charge
ID=6A
â
Drain-Source Diode Characteristics
Source-Drain Diode ForwardVoltage²
VGS=0V,IS =1A
â
Reverse Recovery Time
Reverse Recovery Charge
â
IF=7A,di/dt=100A/μS
â
Typ
â
â
â
â
â
â
â
860
340
93
12
52
31
39
â
â
â
â
120
0.46
Max Units
âv
-100 μA
±100 nA
-4.0 V
0.3 Ω
â ---
âS
â
â pF
â
â ns
â ns
â ns
â ns
38 nC
6.8 nC
21 nC
-6.3 V
240 ns
0.92 nC
www.kersemi.com
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