KSM8N60 Datasheet, PDF (2/4 Pages) Kersemi Electronic Co., Ltd. – Advanced high cell denity trench technology for ultra RDS

KSM8N60
KERSMI ELECTRONIC CO.,LTD.
Symbol
Parameter
RƟJC
Thermal Resistance,Junction to Case1
RƟJA
Thermal Resistance,Junction to Ambient1
Ratings
0.85
62.5
Units
℃/W
Package Marking and Ordering Information
Part NO.
KSM8N60
Marking
KSM8N60
Package
TO-220
Electrical Characteristics TC=25℃ unless otherwise noted
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
Parameter
Conditions
Off Characteristics
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
Gate-Source Leakage Current
VDS=±20V, VDS=0A
On Characteristics
GATE-Source Threshold Voltage
VDS=VDS, ID=250μA
Drain-Source On Resistance²
VDS=10V,ID=6A
Min Typ Max Units
600 — — v
— — 1 μA
— — ±100 nA
2.0 — 4.0 V
— 1.0
1.2
Ω
GFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
VDS=2.5V,ID=5A
— — — ---
Forward Transconductance
VDS=5V,ID=12A
— 8.7 — S
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
— 965 1255
— 105 135 pF
— 12 16
Switching Characteristics
Turn-On Delay Time
VDS=20V,
— 16.5 45 ns
Rise Time
Turn-Off Delay Time
VGS=10V,RGEN=3.3Ω
— 60.5 130 ns
— 16.5 45 ns
Fall Time
— 64.5 140 ns
Total Gate Charge
— 28 36 nC
Gate-SourceCharge
Gate-Drain “Miller” Charge
VGS=4.5V, VDS=20V,
ID=6A
— 4.5
— 12
— nC
— nC
Drain-Source Diode Characteristics
Source-Drain Diode ForwardVoltage²
VGS=0V,IS =1A
— — 1.4 V
Reverse Recovery Time
Reverse Recovery Charge
— 365 — ns
IF=7A,di/dt=100A/μS
— 3.4 — nC
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